TOP N TYPE GE SECRETS

≤ 0.fifteen) is epitaxially grown with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the framework is cycled via oxidizing and annealing stages. A result of the preferential oxidation of Si about Ge [68], the original Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani, khi sử đụng